NSN 5962-01-101-7964 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011017964 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011017964 |
| NCB Code: USA (01) |
| Manufacturers: Intel Corp Sales Office , Intersil Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers C2147-3 under NSN 5962-01-101-7964 of Microcircuit Memory manufactured by Intel Corp Sales Office, Intersil Corporation.
Federal Supply Class of NSN 5962-01-101-7964 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-101-7964, 5962011017964
Characteristics Data of NSN 5962011017964MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 880 INCHES MINIMUM AND 0 920 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 270 INCHES MINIMUM AND 0 310 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 080 INCHES MINIMUM AND 0 130 INCHES MAXIMUM MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND 3-STATE OUTPUT MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN15 INPUT MEMORY CRHL BIT QUANTITY4096 MEMORY CSWJ WORD QUANTITY4096 MEMORY CWSG TERMINAL SURFACE TREATMENTGOLD MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC65 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 65 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPERAM MEMORY PMLC PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACE GOLD MEMORY PRMT PRECIOUS MATERIALGOLD MEMORY TTQY TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 880 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 080 INCHES MINIMUM AND 0 130 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY4096 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTGOLD |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC65 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 65 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | PMLC | PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACE GOLD |
| MEMORY | PRMT | PRECIOUS MATERIALGOLD |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |