NSN 5962-01-106-8182 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011068182 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011068182 |
NCB Code: USA (01) |
Manufacturers: Intersil Corporation , Edo Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1M6551MJF 883B, 423848-1, HM-6551-8, HM1-6551B-2, HM1-6551B-8 under NSN 5962-01-106-8182 of Microcircuit Memory manufactured by Intersil Corporation, Edo Corporation.
Federal Supply Class of NSN 5962-01-106-8182 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-106-8182, 5962011068182
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Part No Manufacturer Item Name QTY RFQ 1M6551MJF 883B Intersil Corporation microcircuit memory Avl RFQ 423848-1 Edo Corporation microcircuit memory Avl RFQ HM-6551-8 Intersil Corporation microcircuit memory Avl RFQ HM1-6551B-2 Intersil Corporation microcircuit memory Avl RFQ HM1-6551B-8 Intersil Corporation microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011068182MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 080 INCHES NOMINAL MEMORY ADAT BODY WIDTH0 388 INCHES NOMINAL MEMORY ADAU BODY HEIGHT0 085 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING22 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND LOW POWER AND SYNCHRONOUS AND WDISABLE AND WENABLE AND 3-STATE OUTPUT MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN16 INPUT MEMORY CRHL BIT QUANTITY1024 MEMORY CSWJ WORD QUANTITY256 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC8 3 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 080 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 388 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 085 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING22 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND LOW POWER AND SYNCHRONOUS AND WDISABLE AND WENABLE AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC8 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |