NSN 5962-01-111-0905 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011110905 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011110905 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Advanced Micro Devices Inc , Honeywell Intl Inc , Honeywell International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MPM10082J, DH75638, AM27S29 BRA, 6406641, 4038322-472 under NSN 5962-01-111-0905 of Microcircuit Memory manufactured by Texas Instrument Inc, Advanced Micro Devices Inc, Honeywell Intl Inc, Honeywell International Inc.
Federal Supply Class of NSN 5962-01-111-0905 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-111-0905, 5962011110905
-
Part No Manufacturer Item Name QTY RFQ MPM10082J Texas Instrument Inc microcircuit memory Avl RFQ DH75638 Advanced Micro Devices Inc microcircuit memory Avl RFQ AM27S29 BRA Advanced Micro Devices Inc microcircuit memory Avl RFQ 6406641 Honeywell Intl Inc microcircuit memory Avl RFQ 4038322-472 Honeywell International Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011110905MRC Criteria Characteristic ADAQ BODY LENGTH 1.000 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ADAU BODY HEIGHT 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 800.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE PROM TEST TEST DATA DOCUMENT 07187-4038322 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.000 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 800.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 07187-4038322 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |