NSN 5962-01-112-6357 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011126357 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011126357 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Intersil Corporation , L 3 Communications , Raytheon Technical Services Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAMILY 008, IM5624CJE 2 13, 1003802-13 under NSN 5962-01-112-6357 of Microcircuit Memory manufactured by Dla Land And Maritime, Intersil Corporation, L 3 Communications, Raytheon Technical Services Company.
Federal Supply Class of NSN 5962-01-112-6357 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-112-6357, 5962011126357
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Part No Manufacturer Item Name QTY RFQ ROM PROM FAMILY 008 Dla Land And Maritime microcircuit memory Avl RFQ IM5624CJE 2 13 Intersil Corporation microcircuit memory Avl RFQ 1003802-13 L 3 Communications microcircuit memory Avl RFQ 1003802-13 Raytheon Technical Services Company microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011126357MRC Criteria Characteristic ADAQ BODY LENGTH 0.870 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM ADAU BODY HEIGHT 0.180 INCHES NOMINAL AFGA OPERATING TEMP RANGE +0.0/+75.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND HIGH SPEED AND LOW POWER CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM TOTAL SUPPLY CZEQ TIME RATING PER CHACTERISTIC 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE PROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 36378-1003802 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.870 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.180 INCHES NOMINAL |
| AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND HIGH SPEED AND LOW POWER |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 36378-1003802 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |