NSN 5962-01-116-3919 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011163919 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011163919 |
NCB Code: USA (01) |
Manufacturers: L 3 Communications , Raytheon Technical Services Company , Harris Corporation , Intersil Corporation , Dla Land And Maritime |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers A576-21, HM1-7611-5, ROM PROM FAMILY 007 under NSN 5962-01-116-3919 of Microcircuit Memory manufactured by L 3 Communications, Raytheon Technical Services Company, Harris Corporation, Intersil Corporation, Dla Land And Maritime.
Federal Supply Class of NSN 5962-01-116-3919 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-116-3919, 5962011163919
-
Part No Manufacturer Item Name QTY RFQ A576-21 L 3 Communications microcircuit memory Avl RFQ A576-21 Raytheon Technical Services Company microcircuit memory Avl RFQ HM1-7611-5 Harris Corporation microcircuit memory Avl RFQ HM1-7611-5 Intersil Corporation microcircuit memory Avl RFQ ROM PROM FAMILY 007 Dla Land And Maritime microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011163919MRC Criteria Characteristic ADAQ BODY LENGTH 0.750 INCHES MINIMUM AND 0.770 INCHES MAXIMUM ADAT BODY WIDTH 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM ADAU BODY HEIGHT 0.155 INCHES NOMINAL AFGA OPERATING TEMP RANGE +0.0/+75.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/STORAGE CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.770 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.155 INCHES NOMINAL |
AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/STORAGE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |