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NSN 5962-01-116-8676 of Microcircuit Memory - Parts Details

Alternative NSN: 5962011168676
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 011168676
NCB Code: USA (01)
Manufacturers: General Semiconductor Inc , Microchip Components , Dla Land And Maritime , Thales Uk Limited , Racal Communications Systems Ltd , Rockwell Collins Inc , Tandem Computers Inc

ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ER3400, DMS 8015B, 934622E, 351-8530-020, 24351 under NSN 5962-01-116-8676 of Microcircuit Memory manufactured by General Semiconductor Inc, Microchip Components, Dla Land And Maritime, Thales Uk Limited, Racal Communications Systems Ltd.

Federal Supply Class of NSN 5962-01-116-8676 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.

Part Number's List for NSN 5962-01-116-8676, 5962011168676

  • Part No Manufacturer Item Name QTY RFQ
    ER3400 General Semiconductor Inc microcircuit memory Avl
    RFQ
    ER3400 Microchip Components microcircuit memory Avl
    RFQ
    DMS 8015B Dla Land And Maritime microcircuit memory Avl
    RFQ
    934622E Thales Uk Limited microcircuit memory Avl
    RFQ
    934622E Racal Communications Systems Ltd microcircuit memory Avl
    RFQ
    351-8530-020 Rockwell Collins Inc microcircuit memory Avl
    RFQ
    24351 Tandem Computers Inc microcircuit memory Avl
    RFQ

Characteristics Data of NSN 5962011168676

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.065 INCHES MINIMUM AND 1.105 INCHES MAXIMUM
ADATBODY WIDTH0.380 INCHES MINIMUM AND 0.393 INCHES MAXIMUM
ADAUBODY HEIGHT0.125 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONRADIO SET,TYPE AN/ARC-190
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT
CQSJINCLOSURE MATERIALCERAMIC AND GLASS
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMP-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN10 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.3 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT13499-351-8530 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA
TTQYTERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT

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