NSN 5962-01-132-5717 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011325717 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011325717 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Edo Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2532-JL-45, TMS2532-45JL, TMS2532-45JDL, 507624-291 under NSN 5962-01-132-5717 of Microcircuit Memory manufactured by Texas Instrument Inc, Edo Corporation.
Federal Supply Class of NSN 5962-01-132-5717 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-132-5717, 5962011325717
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Part No Manufacturer Item Name QTY RFQ TMS2532-JL-45 Texas Instrument Inc microcircuit memory Avl RFQ TMS2532-45JL Texas Instrument Inc microcircuit memory Avl RFQ TMS2532-45JDL Texas Instrument Inc microcircuit memory Avl RFQ 507624-291 Edo Corporation microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011325717MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.595 INCHES NOMINAL ADAU BODY HEIGHT 0.180 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 840.0 MILLIWATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -55.0/+125.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION AIR CONDITION 99999 CBBL FEATURES PROVIDED HERMETICALLY SEALED AND ERASABLE AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 21 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.595 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 840.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AIR CONDITION 99999 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND ERASABLE AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |