NSN 5962-01-133-7565 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011337565 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011337565 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Dla Land And Maritime , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2114-45NL, DMS 85096B, 1818-0438 under NSN 5962-01-133-7565 of Microcircuit Memory manufactured by Texas Instrument Inc, Dla Land And Maritime, Agilent Technologies Inc, Hewlett Packard Co.
Federal Supply Class of NSN 5962-01-133-7565 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-133-7565, 5962011337565
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Part No Manufacturer Item Name QTY RFQ TMS2114-45NL Texas Instrument Inc microcircuit memory Avl RFQ DMS 85096B Dla Land And Maritime microcircuit memory Avl RFQ 1818-0438 Agilent Technologies Inc microcircuit memory Avl RFQ 1818-0438 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011337565MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 920 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 270 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 180 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS MEMORY AGAV END ITEM IDENTIFICATION6625-01-096-1726 28480 MEMORY CBBL FEATURES PROVIDEDSTATIC OPERATION AND 3-STATE OUTPUT AND WENABLE AND POSITIVE OUTPUTS MEMORY CQSJ INCLOSURE MATERIALPLASTIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN16 INPUT MEMORY CRHL BIT QUANTITY4096 MEMORY CSWJ WORD QUANTITY1024 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TTQY TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 920 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATION6625-01-096-1726 28480 |
| MEMORY | CBBL | FEATURES PROVIDEDSTATIC OPERATION AND 3-STATE OUTPUT AND WENABLE AND POSITIVE OUTPUTS |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |