NSN 5962-01-138-3376 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011383376 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011383376 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Hitachi America Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2114L-25NL, HM472114P-3 under NSN 5962-01-138-3376 of Microcircuit Memory manufactured by Texas Instrument Inc, Hitachi America Ltd.
Federal Supply Class of NSN 5962-01-138-3376 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-138-3376, 5962011383376
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Part No Manufacturer Item Name QTY RFQ TMS2114L-25NL Texas Instrument Inc microcircuit memory Avl RFQ HM472114P-3 Hitachi America Ltd microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011383376MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 895 INCHES MINIMUM AND 0 905 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 245 INCHES MINIMUM AND 0 255 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 130 INCHES MINIMUM AND 0 140 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDWENABLE AND LOW POWER AND 3-STATE OUTPUT MEMORY CQSJ INCLOSURE MATERIALPLASTIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN16 INPUT MEMORY CRHL BIT QUANTITY4096 MEMORY CSWJ WORD QUANTITY1024 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TTQY TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 895 INCHES MINIMUM AND 0 905 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 255 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 140 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND LOW POWER AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |