NSN 5962-01-141-5694 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011415694 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011415694 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Gould Inc Simulation Systems Division |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SN74190J, ES48TTL-74190 under NSN 5962-01-141-5694 of Microcircuit Memory manufactured by Texas Instrument Inc, Gould Inc Simulation Systems Division.
Federal Supply Class of NSN 5962-01-141-5694 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-141-5694, 5962011415694
-
Part No Manufacturer Item Name QTY RFQ SN74190J Texas Instrument Inc microcircuit memory Avl RFQ ES48TTL-74190 Gould Inc Simulation Systems Division microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011415694MRC Criteria Characteristic ADAQ BODY LENGTH 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM ADAT BODY WIDTH 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM ADAU BODY HEIGHT 0.180 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 325.0 MILLIWATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION TRAINING DEB 23259 CBBL FEATURES PROVIDED HERMETICALLY SEALED AND ASYNCHRONOUS AND PROGRAMMABLE AND W/ENABLE AND W/CLOCK AND SYNCHRONOUS CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 8 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.3 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 52.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 325.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | TRAINING DEB 23259 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND ASYNCHRONOUS AND PROGRAMMABLE AND W/ENABLE AND W/CLOCK AND SYNCHRONOUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 52.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |