NSN 5962-01-143-2674 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011432674 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011432674 |
| NCB Code: USA (01) |
| Manufacturers: Stmicroelectronics Inc , Advanced Micro Devices Inc , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MK34000P-3, AM9218CDC31366, AM9218CDC, 1818-0519 under NSN 5962-01-143-2674 of Microcircuit Memory manufactured by Stmicroelectronics Inc, Advanced Micro Devices Inc, Agilent Technologies Inc, Hewlett Packard Co.
Federal Supply Class of NSN 5962-01-143-2674 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-143-2674, 5962011432674
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Part No Manufacturer Item Name QTY RFQ MK34000P-3 Stmicroelectronics Inc microcircuit memory Avl RFQ AM9218CDC31366 Advanced Micro Devices Inc microcircuit memory Avl RFQ AM9218CDC Advanced Micro Devices Inc microcircuit memory Avl RFQ 1818-0519 Agilent Technologies Inc microcircuit memory Avl RFQ 1818-0519 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011432674MRC Criteria Characteristic ADAQ BODY LENGTH 1.230 INCHES MAXIMUM ADAT BODY WIDTH 0.580 INCHES MINIMUM AND 0.620 INCHES MAXIMUM ADAU BODY HEIGHT 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION SPECTRUM ANAL 28480 CBBL FEATURES PROVIDED HERMETICALLY SEALED AND 3-STATE OUTPUT AND HIGH PERFORMANCE AND LOW POWER AND PROGRAMMED AND HIGH IMPEDANCE AND WIRE-OR OUTPUTS CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 14 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.230 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.580 INCHES MINIMUM AND 0.620 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | SPECTRUM ANAL 28480 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND 3-STATE OUTPUT AND HIGH PERFORMANCE AND LOW POWER AND PROGRAMMED AND HIGH IMPEDANCE AND WIRE-OR OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |