NSN 5962-01-150-5642 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011505642 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011505642 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Cae Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2708JL, 810-1-200694, 810-1-200693 under NSN 5962-01-150-5642 of Microcircuit Memory manufactured by Texas Instrument Inc, Cae Inc.
Federal Supply Class of NSN 5962-01-150-5642 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-150-5642, 5962011505642
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Part No Manufacturer Item Name QTY RFQ TMS2708JL Texas Instrument Inc microcircuit memory Avl RFQ 810-1-200694 Cae Inc microcircuit memory Avl RFQ 810-1-200693 Cae Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011505642MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.600 INCHES MAXIMUM ADAU BODY HEIGHT 0.205 INCHES NOMINAL AEHX MAXIMUM POWER DISSIPATION RATING 800.0 MILLIWATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -55.0/+125.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND HIGH SPEED AND 3-STATE OUTPUT AND STATIC OPERATION CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 11 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 20.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.205 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 800.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND HIGH SPEED AND 3-STATE OUTPUT AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |