NSN 5962-01-154-2377 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011542377 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011542377 |
| NCB Code: USA (01) |
| Manufacturers: Intersil Corporation , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers CDP1834CD, B4009101, 90602, 09138 under NSN 5962-01-154-2377 of Microcircuit Memory manufactured by Intersil Corporation, Thales Communications Inc.
Federal Supply Class of NSN 5962-01-154-2377 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-154-2377, 5962011542377
Characteristics Data of NSN 5962011542377MRC Criteria Characteristic ADAQ BODY LENGTH 1.220 INCHES NOMINAL ADAT BODY WIDTH 0.596 INCHES NOMINAL ADAU BODY HEIGHT 0.095 INCHES NOMINAL AEHX MAXIMUM POWER DISSIPATION RATING 500.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED MONOLITHIC AND HERMETICALLY SEALED AND STATIC OPERATION AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.5 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.220 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.596 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.095 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND STATIC OPERATION AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |