NSN 5962-01-155-8840 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011558840 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011558840 |
NCB Code: USA (01) |
Manufacturers: Philips Semiconductors Inc , Dla Land And Maritime , Advanced Micro Devices Inc , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers N2617F, DMS86003 B, CN8088AN, AM9216BDC, 1818-0755 under NSN 5962-01-155-8840 of Microcircuit Memory manufactured by Philips Semiconductors Inc, Dla Land And Maritime, Advanced Micro Devices Inc, Agilent Technologies Inc, Hewlett Packard Co.
Federal Supply Class of NSN 5962-01-155-8840 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-155-8840, 5962011558840
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Part No Manufacturer Item Name QTY RFQ N2617F Philips Semiconductors Inc microcircuit memory Avl RFQ DMS86003 B Dla Land And Maritime microcircuit memory Avl RFQ CN8088AN Philips Semiconductors Inc microcircuit memory Avl RFQ AM9216BDC Advanced Micro Devices Inc microcircuit memory Avl RFQ 1818-0755 Agilent Technologies Inc microcircuit memory Avl RFQ 1818-0755 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011558840MRC Criteria Characteristic ADAQ BODY LENGTH 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.560 INCHES MAXIMUM ADAU BODY HEIGHT 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND HIGH PERFORMANCE AND PROGRAMMABLE AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 13 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.560 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH PERFORMANCE AND PROGRAMMABLE AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |