NSN 5962-01-158-5202 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011585202 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011585202 |
| NCB Code: USA (01) |
| Manufacturers: Nec Electronics Usa Inc Electronic , Telephonics Corporation , Integrated Device Technology Inc , Fluke Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers UPD446D-3, UPD446C-3, M235A782-1, IDT-6116S-150CB, 647222 under NSN 5962-01-158-5202 of Microcircuit Memory manufactured by Nec Electronics Usa Inc Electronic, Telephonics Corporation, Integrated Device Technology Inc, Fluke Corporation.
Federal Supply Class of NSN 5962-01-158-5202 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-158-5202, 5962011585202
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Part No Manufacturer Item Name QTY RFQ UPD446D-3 Nec Electronics Usa Inc Electronic microcircuit memory Avl RFQ UPD446C-3 Nec Electronics Usa Inc Electronic microcircuit memory Avl RFQ M235A782-1 Telephonics Corporation microcircuit memory Avl RFQ IDT-6116S-150CB Integrated Device Technology Inc microcircuit memory Avl RFQ 647222 Fluke Corporation microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011585202MRC Criteria Characteristic AEHX MAXIMUM POWER DISSIPATION RATING 550.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 14 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT CZER MEMORY DEVICE TYPE RAM TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 550.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |