NSN 5962-01-167-6180 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011676180 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011676180 |
| NCB Code: USA (01) |
| Manufacturers: Synertek , Nec Electronics Usa Inc Electronic , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SYP2332, 8332A-533A, 1818-0702 under NSN 5962-01-167-6180 of Microcircuit Memory manufactured by Synertek, Nec Electronics Usa Inc Electronic, Agilent Technologies Inc, Hewlett Packard Co.
Federal Supply Class of NSN 5962-01-167-6180 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-167-6180, 5962011676180
Characteristics Data of NSN 5962011676180MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 230 INCHES MINIMUM AND 1 260 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 530 INCHES MINIMUM AND 0 550 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 140 INCHES MINIMUM AND 0 160 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDED3-STATE OUTPUT AND STATIC OPERATION AND WIRE-OR OUTPUTS AND PROGRAMMABLE MEMORY CQSJ INCLOSURE MATERIALPLASTIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN14 INPUT MEMORY CRHL BIT QUANTITY32768 MEMORY CSWJ WORD QUANTITY4096 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 230 INCHES MINIMUM AND 1 260 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 530 INCHES MINIMUM AND 0 550 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 160 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDED3-STATE OUTPUT AND STATIC OPERATION AND WIRE-OR OUTPUTS AND PROGRAMMABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY32768 |
| MEMORY | CSWJ | WORD QUANTITY4096 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |