NSN 5962-01-170-0313 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011700313 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011700313 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Dla Land And Maritime , Extel Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2708-45IL, DMS 86003B, 7703-625 under NSN 5962-01-170-0313 of Microcircuit Memory manufactured by Texas Instrument Inc, Dla Land And Maritime, Extel Corp.
Federal Supply Class of NSN 5962-01-170-0313 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-170-0313, 5962011700313
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Part No Manufacturer Item Name QTY RFQ TMS2708-45IL Texas Instrument Inc microcircuit memory Avl RFQ DMS 86003B Dla Land And Maritime microcircuit memory Avl RFQ 7703-625 Extel Corp microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011700313MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 600 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 205 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING580 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND GATED OUTPUT AND HERMETICALLY SEALED AND PARALLEL OPERATION AND POSITIVE OUTPUTS AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND WTRANSPARENT LID AND 3-STATE OUTPUT MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND METAL AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN10 CHANNEL AND 12 INPUT MEMORY CRHL BIT QUANTITY8192 MEMORY CSWJ WORD QUANTITY1024 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 600 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 205 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING580 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND GATED OUTPUT AND HERMETICALLY SEALED AND PARALLEL OPERATION AND POSITIVE OUTPUTS AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND WTRANSPARENT LID AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND METAL AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 CHANNEL AND 12 INPUT |
| MEMORY | CRHL | BIT QUANTITY8192 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |