NSN 5962-01-170-0600 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011700600 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011700600 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Philips Semiconductors Inc , National Semiconductor Corp , Hewlett Packard Co , Agilent Technologies Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TBP18SA030N, N82S23N, DM74S188N, 1816-1155, 05342-80007 under NSN 5962-01-170-0600 of Microcircuit Memory manufactured by Texas Instrument Inc, Philips Semiconductors Inc, National Semiconductor Corp, Hewlett Packard Co, Agilent Technologies Inc.
Federal Supply Class of NSN 5962-01-170-0600 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-170-0600, 5962011700600
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Part No Manufacturer Item Name QTY RFQ TBP18SA030N Texas Instrument Inc microcircuit memory Avl RFQ N82S23N Philips Semiconductors Inc microcircuit memory Avl RFQ DM74S188N National Semiconductor Corp microcircuit memory Avl RFQ 1816-1155 Hewlett Packard Co microcircuit memory Avl RFQ 05342-80007 Agilent Technologies Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011700600MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 870 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 240 INCHES MINIMUM AND 0 260 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 180 INCHES NOMINAL MEMORY AEHX MAXIMUM POWER DISSIPATION RATING400 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY AGAV END ITEM IDENTIFICATION4920-01-084-7157 TEST STATIONAN MEMORY CBBL FEATURES PROVIDED3-STATE OUTPUT AND WOPEN COLLECTOR AND PROGRAMMABLE MEMORY CQSJ INCLOSURE MATERIALPLASTIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN6 INPUT MEMORY CRHL BIT QUANTITY256 MEMORY CSWJ WORD QUANTITY32 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC50 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 870 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 240 INCHES MINIMUM AND 0 260 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING400 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATION4920-01-084-7157 TEST STATIONAN |
| MEMORY | CBBL | FEATURES PROVIDED3-STATE OUTPUT AND WOPEN COLLECTOR AND PROGRAMMABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
| MEMORY | CRHL | BIT QUANTITY256 |
| MEMORY | CSWJ | WORD QUANTITY32 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC50 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |