NSN 5962-01-176-5716 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011765716 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011765716 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , National Semiconductor Corp , Intel Corp Sales Office , Goddard Valve Corp , Rochester Electronics Llc , Advanced Micro Devices Inc , Raytheon Technical Services Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM HEAD 042, MM2732, MD2732A25 B, MD2732A-25 B, MC2732A25 BJA under NSN 5962-01-176-5716 of Microcircuit Memory manufactured by Dla Land And Maritime, National Semiconductor Corp, Intel Corp Sales Office, Goddard Valve Corp, Rochester Electronics Llc.
Federal Supply Class of NSN 5962-01-176-5716 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-176-5716, 5962011765716
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Part No Manufacturer Item Name QTY RFQ ROM PROM HEAD 042 Dla Land And Maritime microcircuit memory Avl RFQ MM2732 National Semiconductor Corp microcircuit memory Avl RFQ MD2732A25 B Intel Corp Sales Office microcircuit memory Avl RFQ MD2732A-25 B Goddard Valve Corp microcircuit memory Avl RFQ MC2732A25 BJA Rochester Electronics Llc microcircuit memory Avl RFQ D2732 Intel Corp Sales Office microcircuit memory Avl RFQ AM2732DC Advanced Micro Devices Inc microcircuit memory Avl RFQ AM2732A-25 BJA Advanced Micro Devices Inc microcircuit memory Avl RFQ 8001203JX Dla Land And Maritime microcircuit memory Avl RFQ 8001203JB Dla Land And Maritime microcircuit memory Avl RFQ 8001203JA Dla Land And Maritime microcircuit memory Avl RFQ 80012 Dla Land And Maritime microcircuit memory Avl RFQ 4014833-001 Raytheon Technical Services Company microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011765716MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM ADAU BODY HEIGHT 0.210 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+125.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION RADAR DATA TRANSFER,SUBSYSTEM AN/GPN-22(V) CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 14 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-3 MIL-M-38510 CTQX CURRENT RATING PER CHARACTERISTIC 150.00 MILLIAMPERES MAXIMUM SUPPLY CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE PROM TEST TEST DATA DOCUMENT 14933-80012 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR DATA TRANSFER,SUBSYSTEM AN/GPN-22(V) |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 14933-80012 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |