NSN 5962-01-177-5400 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011775400 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011775400 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Electronic Systems Inc , Integrated Device Technology Inc , Raytheon Technical Services Company , Raytheon Aircraft , Nice Cti Systems Uk Ltd , Thales Uk Limited , Rockwell Collins Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MC-E0024-001, IDT6116LA120DB, IDT6116L150CB, IDT6116L1120DB, IDT6116L-120-DB under NSN 5962-01-177-5400 of Microcircuit Memory manufactured by Raytheon Electronic Systems Inc, Integrated Device Technology Inc, Raytheon Technical Services Company, Raytheon Aircraft, Nice Cti Systems Uk Ltd.
Federal Supply Class of NSN 5962-01-177-5400 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-177-5400, 5962011775400
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Part No Manufacturer Item Name QTY RFQ MC-E0024-001 Raytheon Electronic Systems Inc microcircuit memory Avl RFQ IDT6116LA120DB Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6116L150CB Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6116L1120DB Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6116L-120-DB Integrated Device Technology Inc microcircuit memory Avl RFQ G228875-1 Raytheon Technical Services Company microcircuit memory Avl RFQ G228875-1 Raytheon Aircraft microcircuit memory Avl RFQ CAT19613 Nice Cti Systems Uk Ltd microcircuit memory Avl RFQ 42550-0000-0228 Thales Uk Limited microcircuit memory Avl RFQ 4056546-0701 Raytheon Aircraft microcircuit memory Avl RFQ 31 215-009 Rockwell Collins Inc microcircuit memory Avl RFQ 28734-1600-0001 Thales Uk Limited microcircuit memory Avl RFQ 1818-1768 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011775400MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM ADAU BODY HEIGHT 0.210 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION AN/GPN-22(V) RADAR DATA TRANSFER,SUBSYSTEM CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION AND W/ENABLE AND BIDIRECTIONAL CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 22 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-3 MIL-M-38510 CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AN/GPN-22(V) RADAR DATA TRANSFER,SUBSYSTEM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION AND W/ENABLE AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |