NSN 5962-01-182-6520 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011826520 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011826520 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Dla Land And Maritime , National Semiconductor Corp , Advanced Micro Devices Inc , Boeing Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SNC54S472, ROM PROM FAMILY 016, DM54S472J883B, AM27S29DMB, 220-11800-105 under NSN 5962-01-182-6520 of Microcircuit Memory manufactured by Texas Instrument Inc, Dla Land And Maritime, National Semiconductor Corp, Advanced Micro Devices Inc, Boeing Company.
Federal Supply Class of NSN 5962-01-182-6520 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-182-6520, 5962011826520
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Part No Manufacturer Item Name QTY RFQ SNC54S472 Texas Instrument Inc microcircuit memory Avl RFQ ROM PROM FAMILY 016 Dla Land And Maritime microcircuit memory Avl RFQ DM54S472J883B National Semiconductor Corp microcircuit memory Avl RFQ AM27S29DMB Advanced Micro Devices Inc microcircuit memory Avl RFQ 220-11800-105 Boeing Company microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011826520MRC Criteria Characteristic ADAQ BODY LENGTH 0.985 INCHES MAXIMUM ADAT BODY WIDTH 0.280 INCHES MAXIMUM ADAU BODY HEIGHT 0.215 INCHES MAXIMUM AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND W/ENABLE AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.985 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.280 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.215 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND W/ENABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |