NSN 5962-01-203-4286 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012034286 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012034286 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Target Corp , Cardion Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAMILY 027, 8001204JB, 408650 under NSN 5962-01-203-4286 of Microcircuit Memory manufactured by Dla Land And Maritime, Target Corp, Cardion Inc.
Federal Supply Class of NSN 5962-01-203-4286 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-203-4286, 5962012034286
Characteristics Data of NSN 5962012034286MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 210 INCHES NOMINAL MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN14 INPUT MEMORY CRHL BIT QUANTITY32768 MEMORY CSWJ WORD QUANTITY4096 MEMORY CTFT CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 210 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY32768 |
| MEMORY | CSWJ | WORD QUANTITY4096 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |