NSN 5962-01-206-9467 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012069467 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012069467 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Intel Corp Sales Office , Parker Hannifin Corporation , Raytheon Aircraft , Honeywell International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SMJ2114-25JDM, MD2114A 5 B, 899-134-120, 808823-1, 3594614-1 under NSN 5962-01-206-9467 of Microcircuit Memory manufactured by Texas Instrument Inc, Intel Corp Sales Office, Parker Hannifin Corporation, Raytheon Aircraft, Honeywell International Inc.
Federal Supply Class of NSN 5962-01-206-9467 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-206-9467, 5962012069467
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Part No Manufacturer Item Name QTY RFQ SMJ2114-25JDM Texas Instrument Inc microcircuit memory Avl RFQ MD2114A 5 B Intel Corp Sales Office microcircuit memory Avl RFQ 899-134-120 Parker Hannifin Corporation microcircuit memory Avl RFQ 808823-1 Raytheon Aircraft microcircuit memory Avl RFQ 3594614-1 Honeywell International Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012069467MRC Criteria Characteristic ADAQ BODY LENGTH 0.890 INCHES MINIMUM AND 0.910 INCHES MAXIMUM ADAT BODY WIDTH 0.280 INCHES MINIMUM AND 0.305 INCHES MAXIMUM ADAU BODY HEIGHT 0.085 INCHES MINIMUM AND 0.115 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -55.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND STATIC OPERATION AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 15 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT CZER MEMORY DEVICE TYPE RAM TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.890 INCHES MINIMUM AND 0.910 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.280 INCHES MINIMUM AND 0.305 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.085 INCHES MINIMUM AND 0.115 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND STATIC OPERATION AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |