NSN 5962-01-210-6435 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012106435 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012106435 |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , Cardion Inc , Target Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAMILY 027, 8001204JB, 408857 under NSN 5962-01-210-6435 of Microcircuit Memory manufactured by Dla Land And Maritime, Cardion Inc, Target Corp.
Federal Supply Class of NSN 5962-01-210-6435 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-210-6435, 5962012106435
Characteristics Data of NSN 5962012106435MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 210 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0 TO 125 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND WENABLE AND ULTRAVIOLET ERASABLE MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN14 INPUT MEMORY CRHL BIT QUANTITY32768 MEMORY CSWJ WORD QUANTITY4096 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND WENABLE AND ULTRAVIOLET ERASABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY32768 |
MEMORY | CSWJ | WORD QUANTITY4096 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |