NSN 5962-01-214-3227 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012143227 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012143227 |
NCB Code: USA (01) |
Manufacturers: Freescale Semiconductor Inc , Sri International , Stmicroelectronics Inc , Mcdonnell Douglas Helicopter Co , Thales Electronic Systems Gmbh , Itt Cannon |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MCM6810BJBA, GEM39721BJA, EF6810CMB B, B77T0460-0143, 52597 28001 under NSN 5962-01-214-3227 of Microcircuit Memory manufactured by Freescale Semiconductor Inc, Sri International, Stmicroelectronics Inc, Mcdonnell Douglas Helicopter Co, Thales Electronic Systems Gmbh.
Federal Supply Class of NSN 5962-01-214-3227 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-214-3227, 5962012143227
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Part No Manufacturer Item Name QTY RFQ MCM6810BJBA Freescale Semiconductor Inc microcircuit memory Avl RFQ GEM39721BJA Sri International microcircuit memory Avl RFQ EF6810CMB B Stmicroelectronics Inc microcircuit memory Avl RFQ B77T0460-0143 Mcdonnell Douglas Helicopter Co microcircuit memory Avl RFQ 52597 28001 Thales Electronic Systems Gmbh microcircuit memory Avl RFQ 3130269G001 Itt Cannon microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012143227MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 210 INCHES MAXIMUM MEMORY AFGA OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND 3-STATE OUTPUT AND BIDIRECTIONAL MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN14 INPUT MEMORY CRHL BIT QUANTITY1024 MEMORY CSWJ WORD QUANTITY128 MEMORY CTFT CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY FEAT SPECIAL FEATURESWARNING VOLTAGE SENSITIVE DEVICE MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND 3-STATE OUTPUT AND BIDIRECTIONAL |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY128 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | FEAT | SPECIAL FEATURESWARNING VOLTAGE SENSITIVE DEVICE |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |