NSN 5962-01-217-3699 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012173699 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012173699 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Mbda Uk Ltd , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 6011257-001, B88481, SNJ54LS222J under NSN 5962-01-217-3699 of Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Mbda Uk Ltd, Texas Instrument Inc.
Federal Supply Class of NSN 5962-01-217-3699 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-217-3699, 5962012173699
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Part No Manufacturer Item Name QTY RFQ 6011257-001 Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems microcircuit memory Avl RFQ B88481 Mbda Uk Ltd microcircuit memory Avl RFQ SNJ54LS222J Texas Instrument Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012173699MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 060 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 185 INCHES MAXIMUM MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ASYNCHRONOUS AND LOW POWER AND SCHOTTKY MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN12 INPUT MEMORY CTFT CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPEFIRST-IN FIRST-OUT MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ASYNCHRONOUS AND LOW POWER AND SCHOTTKY |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEFIRST-IN FIRST-OUT |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |