NSN 5962-01-217-9458 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012179458 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012179458 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Eaton Aerospace Ltd , Dla Land And Maritime , Philips Semiconductors Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers JBP28L86AMJ, KRD1918A, L03483, S82LS181F 883B under NSN 5962-01-217-9458 of Microcircuit Memory manufactured by Texas Instrument Inc, Eaton Aerospace Ltd, Dla Land And Maritime, Philips Semiconductors Inc.
Federal Supply Class of NSN 5962-01-217-9458 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-217-9458, 5962012179458
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Part No Manufacturer Item Name QTY RFQ JBP28L86AMJ Texas Instrument Inc microcircuit memory Avl RFQ KRD1918A Eaton Aerospace Ltd microcircuit memory Avl RFQ L03483 Dla Land And Maritime microcircuit memory Avl RFQ S82LS181F 883B Philips Semiconductors Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012179458MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 620 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 160 INCHES MAXIMUM MEMORY AFGA OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDPROGRAMMABLE AND HERMETICALLY SEALED AND MONOLITHIC MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN11 INPUT MEMORY CRHL BIT QUANTITY8192 MEMORY CRTL CRITICALITY CODE JUSTIFICATIONFEAT MEMORY CSWJ WORD QUANTITY2048 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPEROM MEMORY FEAT SPECIAL FEATURESITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO L03483 FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 620 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND HERMETICALLY SEALED AND MONOLITHIC |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
MEMORY | CRHL | BIT QUANTITY8192 |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | FEAT | SPECIAL FEATURESITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO L03483 FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |