NSN 5962-01-220-9333 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012209333 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012209333 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc , Thales Avionics , Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SC0215, IDT6167SA45DB, IDT6167S45DB, 99138061, 6011628-001 under NSN 5962-01-220-9333 of Microcircuit Memory manufactured by Integrated Device Technology Inc, Thales Avionics, Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems.
Federal Supply Class of NSN 5962-01-220-9333 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-220-9333, 5962012209333
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Part No Manufacturer Item Name QTY RFQ SC0215 Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6167SA45DB Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6167S45DB Integrated Device Technology Inc microcircuit memory Avl RFQ 99138061 Thales Avionics microcircuit memory Avl RFQ 6011628-001 Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012209333MRC Criteria Characteristic ADAQ BODY LENGTH 0.970 INCHES MINIMUM AND 1.020 INCHES MAXIMUM ADAT BODY WIDTH 0.290 INCHES NOMINAL ADAU BODY HEIGHT 0.120 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND ELECTROSTATIC SENSITIVE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 17 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC ERR-060 NOMINAL HAND PULL AND ERR-060 NOMINAL HAND CZER MEMORY DEVICE TYPE RAM TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.970 INCHES MINIMUM AND 1.020 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.290 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.120 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND ELECTROSTATIC SENSITIVE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | ERR-060 NOMINAL HAND PULL AND ERR-060 NOMINAL HAND |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |