NSN 5962-01-225-0693 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012250693 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012250693 |
| NCB Code: USA (01) |
| Manufacturers: Zilog Inc , Philips Semiconductors Inc , Intersil Corporation , Dla Land And Maritime , Intel Corp Sales Office , Fairchild Semiconductor Corp , Raytheon Aircraft , Compro Computer Services Inc Us , Honeywell International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers Z8536CMB, N82S11F, IM55S18ACJE, IM55S18ACDE, DMS 90087B under NSN 5962-01-225-0693 of Microcircuit Memory manufactured by Zilog Inc, Philips Semiconductors Inc, Intersil Corporation, Dla Land And Maritime, Intel Corp Sales Office.
Federal Supply Class of NSN 5962-01-225-0693 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-225-0693, 5962012250693
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Part No Manufacturer Item Name QTY RFQ Z8536CMB Zilog Inc microcircuit memory Avl RFQ N82S11F Philips Semiconductors Inc microcircuit memory Avl RFQ IM55S18ACJE Intersil Corporation microcircuit memory Avl RFQ IM55S18ACDE Intersil Corporation microcircuit memory Avl RFQ DMS 90087B Dla Land And Maritime microcircuit memory Avl RFQ D2125A Intel Corp Sales Office microcircuit memory Avl RFQ 93425ADC Fairchild Semiconductor Corp microcircuit memory Avl RFQ 583R195H03 Philips Semiconductors Inc microcircuit memory Avl RFQ 5541732-7 Raytheon Aircraft microcircuit memory Avl RFQ 252-282511-003 Philips Semiconductors Inc microcircuit memory Avl RFQ 252-282511-003 Fairchild Semiconductor Corp microcircuit memory Avl RFQ 252-282511-003 Intersil Corporation microcircuit memory Avl RFQ 252-282511-003 Compro Computer Services Inc Us microcircuit memory Avl RFQ 10062613-101 Honeywell International Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012250693MRC Criteria Characteristic ADAQ BODY LENGTH 0.840 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.185 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 935.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+165.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 13 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-2 MIL-M-38510 CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE RAM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 935.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+165.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION |