NSN 5962-01-227-8417 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012278417 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012278417 |
| NCB Code: USA (01) |
| Manufacturers: Toshiba International Corporation , Sharp Corporation , Hitachi America Ltd , Intersil Corporation , Peak Ryzex Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TC5565P-15, LH5268A-10LL, HM6264P-15, HM6264AP-15, 107883-001 under NSN 5962-01-227-8417 of Microcircuit Memory manufactured by Toshiba International Corporation, Sharp Corporation, Hitachi America Ltd, Intersil Corporation, Peak Ryzex Inc.
Federal Supply Class of NSN 5962-01-227-8417 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-227-8417, 5962012278417
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Part No Manufacturer Item Name QTY RFQ TC5565P-15 Toshiba International Corporation microcircuit memory Avl RFQ LH5268A-10LL Sharp Corporation microcircuit memory Avl RFQ HM6264P-15 Hitachi America Ltd microcircuit memory Avl RFQ HM6264P-15 Intersil Corporation microcircuit memory Avl RFQ HM6264AP-15 Hitachi America Ltd microcircuit memory Avl RFQ 107883-001 Peak Ryzex Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012278417MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH36 0 MILLIMETERS NOMINAL MEMORY ADAT BODY WIDTH13 4 MILLIMETERS NOMINAL MEMORY ADAU BODY HEIGHT5 2 MILLIMETERS NOMINAL MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-10 0 TO 85 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-55 0 TO 125 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHIGH SPEED AND LOW POWER AND STATIC OPERATION MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN21 INPUT MEMORY CRHL BIT QUANTITY65536 MEMORY CSWJ WORD QUANTITY8192 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TTQY TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH36 0 MILLIMETERS NOMINAL |
| MEMORY | ADAT | BODY WIDTH13 4 MILLIMETERS NOMINAL |
| MEMORY | ADAU | BODY HEIGHT5 2 MILLIMETERS NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-10 0 TO 85 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHIGH SPEED AND LOW POWER AND STATIC OPERATION |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |