NSN 5962-01-234-5150 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012345150 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012345150 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Advanced Micro Devices Inc , Honeywell International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MPM10082J, DH75638, 4038322-472, 4037567-486, 4037567-192 under NSN 5962-01-234-5150 of Microcircuit Memory manufactured by Texas Instrument Inc, Advanced Micro Devices Inc, Honeywell International Inc.
Federal Supply Class of NSN 5962-01-234-5150 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-234-5150, 5962012345150
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Part No Manufacturer Item Name QTY RFQ MPM10082J Texas Instrument Inc microcircuit memory Avl RFQ DH75638 Advanced Micro Devices Inc microcircuit memory Avl RFQ 4038322-472 Honeywell International Inc microcircuit memory Avl RFQ 4037567-486 Honeywell International Inc microcircuit memory Avl RFQ 4037567-192 Honeywell International Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012345150MRC Criteria Characteristic ADAQ BODY LENGTH 1.060 INCHES MAXIMUM ADAT BODY WIDTH 0.350 INCHES MAXIMUM ADAU BODY HEIGHT 0.205 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 853.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION 5820-01-172-2886 SYMBOL GENERATO CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.350 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.205 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 853.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 5820-01-172-2886 SYMBOL GENERATO |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |