NSN 5962-01-241-3168 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012413168 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012413168 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Boeing Company , Raytheon Aircraft , Advanced Micro Devices Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ZA0794J, V510-00018-1, AM9114BDMB under NSN 5962-01-241-3168 of Microcircuit Memory manufactured by Texas Instrument Inc, Boeing Company, Raytheon Aircraft, Advanced Micro Devices Inc.
Federal Supply Class of NSN 5962-01-241-3168 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-241-3168, 5962012413168
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Part No Manufacturer Item Name QTY RFQ ZA0794J Texas Instrument Inc microcircuit memory Avl RFQ V510-00018-1 Boeing Company microcircuit memory Avl RFQ V510-00018-1 Raytheon Aircraft microcircuit memory Avl RFQ AM9114BDMB Advanced Micro Devices Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012413168MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 160 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN16 INPUT MEMORY CRHL BIT QUANTITY4096 MEMORY CSWJ WORD QUANTITY1024 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |