NSN 5962-01-276-4790 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012764790 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012764790 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Dla Land And Maritime , National Semiconductor Corp , Mcdonnell Douglas Corp Mcdonnell |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SN54S472, ROM PROM FAMILY 016, DM54S472, 219-033-001-03 under NSN 5962-01-276-4790 of Microcircuit Memory manufactured by Texas Instrument Inc, Dla Land And Maritime, National Semiconductor Corp, Mcdonnell Douglas Corp Mcdonnell.
Federal Supply Class of NSN 5962-01-276-4790 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-276-4790, 5962012764790
-
Part No Manufacturer Item Name QTY RFQ SN54S472 Texas Instrument Inc microcircuit memory Avl RFQ ROM PROM FAMILY 016 Dla Land And Maritime microcircuit memory Avl RFQ DM54S472 National Semiconductor Corp microcircuit memory Avl RFQ 219-033-001-03 Mcdonnell Douglas Corp Mcdonnell microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012764790MRC Criteria Characteristic ADAQ BODY LENGTH 0.985 INCHES MAXIMUM ADAT BODY WIDTH 0.300 INCHES MAXIMUM ADAU BODY HEIGHT 0.160 INCHES MAXIMUM AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED BIPOLAR AND W/ENABLE AND HIGH SPEED AND SCHOTTKY CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.985 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.160 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND W/ENABLE AND HIGH SPEED AND SCHOTTKY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |