NSN 5962-01-277-8716 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012778716 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012778716 |
| NCB Code: USA (01) |
| Manufacturers: Lattice Corp , Integrated Device Technology Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SR64K4-35C 883C, IDT7188L35CB under NSN 5962-01-277-8716 of Microcircuit Memory manufactured by Lattice Corp, Integrated Device Technology Inc.
Federal Supply Class of NSN 5962-01-277-8716 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-277-8716, 5962012778716
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Part No Manufacturer Item Name QTY RFQ SR64K4-35C 883C Lattice Corp microcircuit memory Avl RFQ IDT7188L35CB Integrated Device Technology Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012778716MRC Criteria Characteristic ADAQ BODY LENGTH 1.030 INCHES MINIMUM AND 1.200 INCHES MAXIMUM ADAT BODY WIDTH 0.250 INCHES MINIMUM AND 0.320 INCHES MAXIMUM ADAU BODY HEIGHT 0.230 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION 5865-01-262-7031 COMMUNICATION P CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND LOW POWER AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 20 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE RAM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 22 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.030 INCHES MINIMUM AND 1.200 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.250 INCHES MINIMUM AND 0.320 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.230 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 5865-01-262-7031 COMMUNICATION P |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND LOW POWER AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |