NSN 5962-01-278-3555 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012783555 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012783555 |
| NCB Code: USA (01) |
| Manufacturers: Synertek , Stmicroelectronics Inc , Fujitsu America Inc , Logic Devices Incorporated , Integrated Device Technology Inc , Intersil Corporation , Kearfott Corp , Texas Instrument Inc , Dla Land And Maritime , Honeywell International Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SYMD2128-2M16019, SYMD2128-2, MK4118N2, MB8416A-12L, L6116HMB120 under NSN 5962-01-278-3555 of Microcircuit Memory manufactured by Synertek, Stmicroelectronics Inc, Fujitsu America Inc, Logic Devices Incorporated, Integrated Device Technology Inc.
Federal Supply Class of NSN 5962-01-278-3555 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-278-3555, 5962012783555
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Part No Manufacturer Item Name QTY RFQ SYMD2128-2M16019 Synertek microcircuit memory Avl RFQ SYMD2128-2 Synertek microcircuit memory Avl RFQ MK4118N2 Stmicroelectronics Inc microcircuit memory Avl RFQ MB8416A-12L Fujitsu America Inc microcircuit memory Avl RFQ L6116HMB120 Logic Devices Incorporated microcircuit memory Avl RFQ IDT6116LA120DM Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6116LA120DB Integrated Device Technology Inc microcircuit memory Avl RFQ HM4-6116-2 Intersil Corporation microcircuit memory Avl RFQ HM1-65162B-8 Intersil Corporation microcircuit memory Avl RFQ A584A177-111 Kearfott Corp microcircuit memory Avl RFQ A584A177-101 Fujitsu America Inc microcircuit memory Avl RFQ A584A177-101 Kearfott Corp microcircuit memory Avl RFQ A584A177-101 Texas Instrument Inc microcircuit memory Avl RFQ A584A177-101 Integrated Device Technology Inc microcircuit memory Avl RFQ 8403615JX Dla Land And Maritime microcircuit memory Avl RFQ 8403615JB Dla Land And Maritime microcircuit memory Avl RFQ 8403615JA Dla Land And Maritime microcircuit memory Avl RFQ 84036 Dla Land And Maritime microcircuit memory Avl RFQ 513-097-9301 Honeywell International Inc microcircuit memory Avl RFQ 1LJ6-0001 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012783555MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM ADAU BODY HEIGHT 0.210 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -55.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND 3-STATE OUTPUT AND BIDIRECTIONAL CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 22 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-3 MIL-M-38510 CTQX CURRENT RATING PER CHARACTERISTIC 90.00 MILLIAMPERES MAXIMUM SUPPLY CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE RAM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND 3-STATE OUTPUT AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 90.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |