NSN 5962-01-278-7239 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012787239 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012787239 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2532-45JL, SMJ2532-45JM, SMJ2532-45JDM, 316-2548-001 under NSN 5962-01-278-7239 of Microcircuit Memory manufactured by Texas Instrument Inc, Raytheon Aircraft.
Federal Supply Class of NSN 5962-01-278-7239 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-278-7239, 5962012787239
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Part No Manufacturer Item Name QTY RFQ TMS2532-45JL Texas Instrument Inc microcircuit memory Avl RFQ SMJ2532-45JM Texas Instrument Inc microcircuit memory Avl RFQ SMJ2532-45JDM Texas Instrument Inc microcircuit memory Avl RFQ 316-2548-001 Raytheon Aircraft microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012787239MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM" ADAT BODY WIDTH 0.600 INCHES MAXIMUM" ADAU BODY HEIGHT 0.210 INCHES MAXIMUM" AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS" CBBL FEATURES PROVIDED HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND ERASABLE" CQSJ INCLOSURE MATERIAL CERAMIC" CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE" CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN 13 INPUT" CRHL UNABLE TO DECODE UNABLE TO DECODE" CSWJ UNABLE TO DECODE UNABLE TO DECODE" CWSG TERMINAL SURFACE TREATMENT SOLDER" CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 6.0 VOLTS MAXIMUM POWER SOURCE" CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" CZER MEMORY DEVICE TYPE ROM" TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT" ADAQ BODY LENGTH 1.290 INCHES MAXIMUM" ADAT BODY WIDTH 0.600 INCHES MAXIMUM" ADAU BODY HEIGHT 0.210 INCHES MAXIMUM" AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS" CBBL FEATURES PROVIDED HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND ERASABLE" CQSJ INCLOSURE MATERIAL CERAMIC" CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE" CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN 13 INPUT" CRHL UNABLE TO DECODE UNABLE TO DECODE" CSWJ UNABLE TO DECODE UNABLE TO DECODE" CWSG TERMINAL SURFACE TREATMENT SOLDER" CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 6.0 VOLTS MAXIMUM POWER SOURCE" CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" CZER MEMORY DEVICE TYPE ROM" TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT"
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND ERASABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT" |
| CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND ERASABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT" |
| CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |