NSN 5962-01-288-6900 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012886900 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012886900 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Dla Land And Maritime , Intersil Corporation , Lansdale Semiconductor Inc , Raytheon Aircraft , University Of Texas At Austin , Fairchild Semiconductor Corp , General Dynamics Information Systemes , Mmi Amd , Rockwell Collins Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TBP24S10N9, ROM PROM HEAD 005, HM1-7611-8, HL7611E1, HL7611 under NSN 5962-01-288-6900 of Microcircuit Memory manufactured by Texas Instrument Inc, Dla Land And Maritime, Intersil Corporation, Lansdale Semiconductor Inc, Raytheon Aircraft.
Federal Supply Class of NSN 5962-01-288-6900 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-288-6900, 5962012886900
-
Part No Manufacturer Item Name QTY RFQ TBP24S10N9 Texas Instrument Inc microcircuit memory Avl RFQ ROM PROM HEAD 005 Dla Land And Maritime microcircuit memory Avl RFQ HM1-7611-8 Intersil Corporation microcircuit memory Avl RFQ HL7611E1 Lansdale Semiconductor Inc microcircuit memory Avl RFQ HL7611 Lansdale Semiconductor Inc microcircuit memory Avl RFQ G267767-1 Raytheon Aircraft microcircuit memory Avl RFQ ED1365-001 University Of Texas At Austin microcircuit memory Avl RFQ 82S129N Fairchild Semiconductor Corp microcircuit memory Avl RFQ 69020700-04 General Dynamics Information Systemes microcircuit memory Avl RFQ 5301-1D 883B Mmi Amd microcircuit memory Avl RFQ 5201-1J Mmi Amd microcircuit memory Avl RFQ 351-8893-010 Mmi Amd microcircuit memory Avl RFQ 351-8893-010 Rockwell Collins Inc microcircuit memory Avl RFQ 1816-0005 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012886900MRC Criteria Characteristic ADAQ BODY LENGTH 0.840 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.185 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 739.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND MONOLITHIC CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-2 MIL-M-38510 CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TEST TEST DATA DOCUMENT 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |