NSN 5962-01-296-1080 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012961080 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012961080 |
NCB Code: USA (01) |
Manufacturers: Seeq Technology Inc , Atmel Corporation , Honeywell International Inc , Ferranti Technologies Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers DM28C65 250 B, AT28C64B-25DM 883, 8512040-465, 28896-1255-811, 12839 10055 ITEM 56 under NSN 5962-01-296-1080 of Microcircuit Memory manufactured by Seeq Technology Inc, Atmel Corporation, Honeywell International Inc, Ferranti Technologies Ltd.
Federal Supply Class of NSN 5962-01-296-1080 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-296-1080, 5962012961080
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Part No Manufacturer Item Name QTY RFQ DM28C65 250 B Seeq Technology Inc microcircuit memory Avl RFQ AT28C64B-25DM 883 Atmel Corporation microcircuit memory Avl RFQ 8512040-465 Honeywell International Inc microcircuit memory Avl RFQ 28896-1255-811 Ferranti Technologies Ltd microcircuit memory Avl RFQ 12839 10055 ITEM 56 Ferranti Technologies Ltd microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012961080MRC Criteria Characteristic ADAQ BODY LENGTH 1.490 INCHES MAXIMUM ADAT BODY WIDTH 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM ADAU BODY HEIGHT 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 500.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 24 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-10 MIL-M-38510 CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 28 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 24 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |