NSN 5962-01-310-2181 of Microcircuit Memory - Parts Details
Alternative NSN: 5962013102181 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013102181 |
NCB Code: USA (01) |
Manufacturers: Toshiba International Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TC5564APL-15 under NSN 5962-01-310-2181 of Microcircuit Memory manufactured by Toshiba International Corporation.
Federal Supply Class of NSN 5962-01-310-2181 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-310-2181, 5962013102181
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Part No Manufacturer Item Name QTY RFQ TC5564APL-15 Toshiba International Corporation microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013102181MRC Criteria Characteristic MEMORY AFGA OPERATING TEMP RANGE-40 085 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDBURN IN AND LOW POWER AND STATIC OPERATION MEMORY ADAQ BODY LENGTH380 0 MILLIMETERS MAXIMUM MEMORY ADAU BODY HEIGHT469 0 MILLIMETERS MAXIMUM MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CSWJ WORD QUANTITY8192 MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT MEMORY CQZP INPUT CIRCUIT PATTERN26 INPUT MEMORY CRHL BIT QUANTITY65536 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY ADAT BODY WIDTH142 0 MILLIMETERS MAXIMUM
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AFGA | OPERATING TEMP RANGE-40 085 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND LOW POWER AND STATIC OPERATION |
MEMORY | ADAQ | BODY LENGTH380 0 MILLIMETERS MAXIMUM |
MEMORY | ADAU | BODY HEIGHT469 0 MILLIMETERS MAXIMUM |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CSWJ | WORD QUANTITY8192 |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
MEMORY | CQZP | INPUT CIRCUIT PATTERN26 INPUT |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | ADAT | BODY WIDTH142 0 MILLIMETERS MAXIMUM |