NSN 5962-01-310-6280 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013106280 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013106280 |
| NCB Code: USA (01) |
| Manufacturers: Selex Galileo Ltd , Integrated Device Technology Inc , Thales Avionics , Alcatel Lucent , Alcatel Telspace |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VA-85-0964-003, IDT7130SA100CB, 99167819, 77090142 under NSN 5962-01-310-6280 of Microcircuit Memory manufactured by Selex Galileo Ltd, Integrated Device Technology Inc, Thales Avionics, Alcatel Lucent, Alcatel Telspace.
Federal Supply Class of NSN 5962-01-310-6280 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-310-6280, 5962013106280
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Part No Manufacturer Item Name QTY RFQ VA-85-0964-003 Selex Galileo Ltd microcircuit memory Avl RFQ IDT7130SA100CB Integrated Device Technology Inc microcircuit memory Avl RFQ 99167819 Thales Avionics microcircuit memory Avl RFQ 77090142 Alcatel Lucent microcircuit memory Avl RFQ 77090142 Alcatel Telspace microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013106280MRC Criteria Characteristic ADAQ BODY LENGTH 2.430 INCHES MAXIMUM ADAT BODY WIDTH 0.610 INCHES MAXIMUM ADAU BODY HEIGHT 0.170 INCHES MAXIMUM AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND W/ENABLE AND HIGH PERFORMANCE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 44 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEQ TIME RATING PER CHACTERISTIC 100.00 NANOSECONDS MAXIMUM DELAY CZER MEMORY DEVICE TYPE PROM TTQY TERMINAL TYPE AND QUANTITY 48 PRINTED CIRCUIT CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 2.430 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.170 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND W/ENABLE AND HIGH PERFORMANCE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 44 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM DELAY |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 48 PRINTED CIRCUIT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |