NSN 5962-01-337-3536 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013373536 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013373536 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Telephonics Corporation , Philips Semiconductors Inc , Mmi Amd , Fairchild Semiconductor Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAIMLY 028, M235A351-101E, CC4418-00, 82S181BJA, 53S881J 883B under NSN 5962-01-337-3536 of Microcircuit Memory manufactured by Dla Land And Maritime, Telephonics Corporation, Philips Semiconductors Inc, Mmi Amd, Fairchild Semiconductor Corp.
Federal Supply Class of NSN 5962-01-337-3536 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-337-3536, 5962013373536
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Part No Manufacturer Item Name QTY RFQ ROM PROM FAIMLY 028 Dla Land And Maritime microcircuit memory Avl RFQ M235A351-101E Telephonics Corporation microcircuit memory Avl RFQ CC4418-00 Telephonics Corporation microcircuit memory Avl RFQ 82S181BJA Philips Semiconductors Inc microcircuit memory Avl RFQ 53S881J 883B Mmi Amd microcircuit memory Avl RFQ 29631DMB Fairchild Semiconductor Corp microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013373536MRC Criteria Characteristic AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CQSJ INCLOSURE MATERIAL CERAMIC CQZP INPUT CIRCUIT PATTERN 14 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE ROM TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). ADAQ BODY LENGTH 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM ADAU BODY HEIGHT 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 830.0 MILLIWATTS CBBL FEATURES PROVIDED BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT ADAT BODY WIDTH 0.610 INCHES MAXIMUM
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| ADAQ | BODY LENGTH | 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 830.0 MILLIWATTS |
| CBBL | FEATURES PROVIDED | BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |