NSN 5962-01-337-8569 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013378569 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013378569 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc , Thales Training And Simulation Inc , Marconi Avionics Ltd , Selex Galileo Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers IDT7201SA35P, IDT7201LA35P, 4024821-001, 3317-0005 under NSN 5962-01-337-8569 of Microcircuit Memory manufactured by Integrated Device Technology Inc, Thales Training And Simulation Inc, Marconi Avionics Ltd, Selex Galileo Ltd.
Federal Supply Class of NSN 5962-01-337-8569 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-337-8569, 5962013378569
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Part No Manufacturer Item Name QTY RFQ IDT7201SA35P Integrated Device Technology Inc microcircuit memory Avl RFQ IDT7201LA35P Integrated Device Technology Inc microcircuit memory Avl RFQ 4024821-001 Thales Training And Simulation Inc microcircuit memory Avl RFQ 3317-0005 Marconi Avionics Ltd microcircuit memory Avl RFQ 3317-0005 Selex Galileo Ltd microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013378569MRC Criteria Characteristic ADAQ BODY LENGTH 1.400 INCHES MINIMUM AND 1.460 INCHES MAXIMUM ADAT BODY WIDTH 0.500 INCHES MINIMUM AND 0.550 INCHES MAXIMUM ADAU BODY HEIGHT 0.185 INCHES MAXIMUM AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+125.0 DEG CELSIUS CQSJ INCLOSURE MATERIAL PLASTIC CWSG TERMINAL SURFACE TREATMENT SOLDER CZEQ TIME RATING PER CHACTERISTIC 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 28 PRINTED CIRCUIT CQZP INPUT CIRCUIT PATTERN 14 INPUT CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS CBBL FEATURES PROVIDED HIGH PERFORMANCE AND LOW POWER AND HIGH SPEED
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.400 INCHES MINIMUM AND 1.460 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.550 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CBBL | FEATURES PROVIDED | HIGH PERFORMANCE AND LOW POWER AND HIGH SPEED |