NSN 5962-01-349-5555 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013495555 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013495555 |
| NCB Code: USA (01) |
| Manufacturers: Xilinx Inc , Indra Espacio Sa , Bae Systems |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers XC1736-CD8M, I46000017361T, 8949340-05, 8949340-03, 8949340-01 under NSN 5962-01-349-5555 of Microcircuit Memory manufactured by Xilinx Inc, Indra Espacio Sa, Bae Systems.
Federal Supply Class of NSN 5962-01-349-5555 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-349-5555, 5962013495555
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Part No Manufacturer Item Name QTY RFQ XC1736-CD8M Xilinx Inc microcircuit memory Avl RFQ I46000017361T Indra Espacio Sa microcircuit memory Avl RFQ 8949340-05 Bae Systems microcircuit memory Avl RFQ 8949340-03 Bae Systems microcircuit memory Avl RFQ 8949340-01 Bae Systems microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013495555MRC Criteria Characteristic AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM SUPPLY CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 150.00 NANOSECONDS MAXIMUM DELAY CZER MEMORY DEVICE TYPE PROM TTQY TERMINAL TYPE AND QUANTITY 8 PRINTED CIRCUIT AFJQ STORAGE TEMP RANGE -65.0 TO 125.0 DEG CELSIUS CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQSJ INCLOSURE MATERIAL CERAMIC
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM DELAY |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 8 PRINTED CIRCUIT |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |