NSN 5962-01-362-8123 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013628123 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013628123 |
| NCB Code: USA (01) |
| Manufacturers: Waferscale Integration Inc , Texas Instrument Inc , Cypress Semiconductor Corporation , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers WS57C49B-45, HE1285AOD011, CY7C263-45DMB, 654907-11 under NSN 5962-01-362-8123 of Microcircuit Memory manufactured by Waferscale Integration Inc, Texas Instrument Inc, Cypress Semiconductor Corporation, Raytheon Aircraft.
Federal Supply Class of NSN 5962-01-362-8123 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-362-8123, 5962013628123
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Part No Manufacturer Item Name QTY RFQ WS57C49B-45 Waferscale Integration Inc microcircuit memory Avl RFQ HE1285AOD011 Texas Instrument Inc microcircuit memory Avl RFQ CY7C263-45DMB Cypress Semiconductor Corporation microcircuit memory Avl RFQ 654907-11 Raytheon Aircraft microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013628123MRC Criteria Characteristic AEHX MAXIMUM POWER DISSIPATION RATING 660.0 MILLIWATTS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE PROM TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS CQZP INPUT CIRCUIT PATTERN 13 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-9 MIL-M-38510
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |