NSN 5962-01-376-1639 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013761639 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013761639 |
| NCB Code: USA (01) |
| Manufacturers: Drs Training And Control Systems Llc , Dla Land And Maritime |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 89014106, 89014087, 5962-8867001LA under NSN 5962-01-376-1639 of Microcircuit Memory manufactured by Drs Training And Control Systems Llc, Dla Land And Maritime.
Federal Supply Class of NSN 5962-01-376-1639 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-376-1639, 5962013761639
Characteristics Data of NSN 5962013761639MRC Criteria Characteristic CZER Memory Device Type PAL CTQX Current Rating Per Characteristic 16.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL CZEQ Time Rating Per Chacteristic 25.00 NANOSECONDS MAXIMUM ACCESS TEST Test Data Document 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). AFJQ Storage Temp Range -65.0/+150.0 DEG CELSIUS ADAT Body Width 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM CQZP Input Circuit Pattern 22 INPUT CBBL Features Provided ELECTROSTATIC SENSITIVE AND PROGRAMMED AND W/DISABLE AND W/CLOCK AND W/ENABLE AND HIGH IMPEDANCE AND ASYNCHRONOUS AND BIDIRECTIONAL AND 3-STATE OUTPUT CQSJ Inclosure Material CERAMIC MRC Decoded Requirement Clear Text Reply ADAQ Body Length 1.280 INCHES MAXIMUM AEHX Maximum Power Dissipation Rating 1.2 WATTS TTQY Terminal Type And Quantity 24 PRINTED CIRCUIT ADAU Body Height 0.185 INCHES MAXIMUM CZEN Voltage Rating And Type Per Characteristic -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CTFT Case Outline Source And Designator D-9 MIL-M-38510 CQSZ Inclosure Configuration DUAL-IN-LINE CXCY Part Name Assigned By Controlling Agency AND-OR-LOGIC ARRAY -PAL 1553 SELECT AFGA Operating Temp Range -55.0/+125.0 DEG CELSIUS CZEP Capitance Rating Per Characteristic 10.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM CWSG Terminal Surface Treatment SOLDER CQWX Output Logic Form COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
| MRC | Criteria | Characteristic |
|---|---|---|
| CZER | Memory Device Type | PAL |
| CTQX | Current Rating Per Characteristic | 16.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| CZEQ | Time Rating Per Chacteristic | 25.00 NANOSECONDS MAXIMUM ACCESS |
| TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| ADAT | Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQZP | Input Circuit Pattern | 22 INPUT |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND PROGRAMMED AND W/DISABLE AND W/CLOCK AND W/ENABLE AND HIGH IMPEDANCE AND ASYNCHRONOUS AND BIDIRECTIONAL AND 3-STATE OUTPUT |
| CQSJ | Inclosure Material | CERAMIC |
| MRC | Decoded Requirement | Clear Text Reply |
| ADAQ | Body Length | 1.280 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.2 WATTS |
| TTQY | Terminal Type And Quantity | 24 PRINTED CIRCUIT |
| ADAU | Body Height | 0.185 INCHES MAXIMUM |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CTFT | Case Outline Source And Designator | D-9 MIL-M-38510 |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| CXCY | Part Name Assigned By Controlling Agency | AND-OR-LOGIC ARRAY -PAL 1553 SELECT |
| AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
| CZEP | Capitance Rating Per Characteristic | 10.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM |
| CWSG | Terminal Surface Treatment | SOLDER |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |