NSN 5962-01-414-8382 of Microcircuit Digital - Parts Details
Alternative NSN: 5962014148382 |
Item Name: Microcircuit Digital |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 014148382 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MT5C1189EC-25883C, 2693404-0003 under NSN 5962-01-414-8382 of Microcircuit Digital manufactured by Texas Instrument Inc, Raytheon Aircraft.
Federal Supply Class of NSN 5962-01-414-8382 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-414-8382, 5962014148382
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Part No Manufacturer Item Name QTY RFQ MT5C1189EC-25883C Texas Instrument Inc microcircuit digital Avl RFQ 2693404-0003 Raytheon Aircraft microcircuit digital Avl RFQ
Characteristics Data of NSN 5962014148382MRC Criteria Characteristic ADAQ BODY LENGTH 0.815 INCHES MINIMUM AND 0.835 INCHES MAXIMUM" ADAT BODY WIDTH 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" ADAU BODY HEIGHT 0.442 INCHES MINIMUM AND 0.458 INCHES MAXIMUM" AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS" AGAV END ITEM IDENTIFICATION F-16" CBBL FEATURES PROVIDED ELECTROSTATIC SENSITIVE" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN DUAL 2 INPUT" CRTL CRITICALITY CODE JUSTIFICATION CBBL" CSSL DESIGN FUNCTION AND QUANTITY 9 MEMORY, STATIC RAM" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY MEMORY, DIGITAL, CMOS, 128K X 9 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON" ADAQ BODY LENGTH 0.815 INCHES MINIMUM AND 0.835 INCHES MAXIMUM" ADAT BODY WIDTH 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" ADAU BODY HEIGHT 0.442 INCHES MINIMUM AND 0.458 INCHES MAXIMUM" AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS" AGAV END ITEM IDENTIFICATION F-16" CBBL FEATURES PROVIDED ELECTROSTATIC SENSITIVE" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN DUAL 2 INPUT" CRTL CRITICALITY CODE JUSTIFICATION CBBL" CSSL DESIGN FUNCTION AND QUANTITY 9 MEMORY, STATIC RAM" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY MEMORY, DIGITAL, CMOS, 128K X 9 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON"
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.815 INCHES MINIMUM AND 0.835 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.442 INCHES MINIMUM AND 0.458 INCHES MAXIMUM" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
AGAV | END ITEM IDENTIFICATION | F-16" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | DUAL 2 INPUT" |
CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
CSSL | DESIGN FUNCTION AND QUANTITY | 9 MEMORY, STATIC RAM" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY, DIGITAL, CMOS, 128K X 9 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON" |
ADAQ | BODY LENGTH | 0.815 INCHES MINIMUM AND 0.835 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.442 INCHES MINIMUM AND 0.458 INCHES MAXIMUM" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
AGAV | END ITEM IDENTIFICATION | F-16" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | DUAL 2 INPUT" |
CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
CSSL | DESIGN FUNCTION AND QUANTITY | 9 MEMORY, STATIC RAM" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY, DIGITAL, CMOS, 128K X 9 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON" |