NSN 5962-01-556-1877 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962015561877 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 015561877 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers IDT71256L55TDB under NSN 5962-01-556-1877 of Microcircuit Memory manufactured by Integrated Device Technology Inc.
Federal Supply Class of NSN 5962-01-556-1877 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-556-1877, 5962015561877
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Part No Manufacturer Item Name QTY RFQ IDT71256L55TDB Integrated Device Technology Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962015561877MRC Criteria Characteristic AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" CBBL FEATURES PROVIDED HIGH SPEED" CQSJ INCLOSURE MATERIAL CERAMIC" CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN 28 INPUT" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY CMOS STATIC RAM 256K" CZEQ TIME RATING PER CHACTERISTIC 55.00 NANOSECONDS MAXIMUM ACCESS" CZER MEMORY DEVICE TYPE RAM" CZZZ MEMORY CAPACITY 32K X 8" FEAT SPECIAL FEATURES MIL-STD-883, CLASS B COMPLIANT; LOW POWER" TTQY TERMINAL TYPE AND QUANTITY 28 PIN" AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" CBBL FEATURES PROVIDED HIGH SPEED" CQSJ INCLOSURE MATERIAL CERAMIC" CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN 28 INPUT" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY CMOS STATIC RAM 256K" CZEQ TIME RATING PER CHACTERISTIC 55.00 NANOSECONDS MAXIMUM ACCESS" CZER MEMORY DEVICE TYPE RAM" CZZZ MEMORY CAPACITY 32K X 8" FEAT SPECIAL FEATURES MIL-STD-883, CLASS B COMPLIANT; LOW POWER" TTQY TERMINAL TYPE AND QUANTITY 28 PIN"
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HIGH SPEED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM 256K" |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 32K X 8" |
| FEAT | SPECIAL FEATURES | MIL-STD-883, CLASS B COMPLIANT; LOW POWER" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HIGH SPEED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM 256K" |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 32K X 8" |
| FEAT | SPECIAL FEATURES | MIL-STD-883, CLASS B COMPLIANT; LOW POWER" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN" |