NSN 5980-01-243-8475 of Light Emitting Diode - Parts Details
| Alternative NSN: 5980012438475 |
| Item Name: Light Emitting Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5980 Optoelectrical Devices and Associated Hardware |
| NIIN: 012438475 |
| NCB Code: USA (01) |
| Manufacturers: Xciton Corp , Texas Instrument Inc , Siemens Corp , Avago Technologies Us Inc Division , Howell Corp , Drs Icas Llc , Raytheon Aircraft , Aeroflex Wichita Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers XC556R3, TIL228-2, LDH5122, HLMP-4601, HLMP-3301 OPTION 009 under NSN 5980-01-243-8475 of Light Emitting Diode manufactured by Xciton Corp, Texas Instrument Inc, Siemens Corp, Avago Technologies Us Inc Division, Howell Corp.
Federal Supply Class of NSN 5980-01-243-8475 is FSC 5980 contains part details of Optoelectrical Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5980-01-243-8475, 5980012438475
-
Part No Manufacturer Item Name QTY RFQ XC556R3 Xciton Corp light emitting diode Avl RFQ TIL228-2 Texas Instrument Inc light emitting diode Avl RFQ LDH5122 Siemens Corp light emitting diode Avl RFQ HLMP-4601 Avago Technologies Us Inc Division light emitting diode Avl RFQ HLMP-3301 OPTION 009 Avago Technologies Us Inc Division light emitting diode Avl RFQ HLMP-3301 OPTION 007 Avago Technologies Us Inc Division light emitting diode Avl RFQ HLMP-3301 HLMP-0103 Avago Technologies Us Inc Division light emitting diode Avl RFQ HLMP-3301 Avago Technologies Us Inc Division light emitting diode Avl RFQ C6366 Howell Corp light emitting diode Avl RFQ 93087-1 Drs Icas Llc light emitting diode Avl RFQ 615539-6 Raytheon Aircraft light emitting diode Avl RFQ 5082-4655 Avago Technologies Us Inc Division light emitting diode Avl RFQ 4950-0200-000 Aeroflex Wichita Inc light emitting diode Avl RFQ 1990-0517 Hewlett Packard Co light emitting diode Avl RFQ
Characteristics Data of NSN 5980012438475MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.373 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.600 INCHES MINIMUM ADAV OVERALL DIAMETER 0.240 INCHES MAXIMUM AEXK LENS TRANSPARENCY TRANSLUCENT AXGY MOUNTING METHOD PRESS FIT CBBL FEATURES PROVIDED MOUNTING HARDWARE CTMZ SEMICONDUCTOR MATERIAL GALLIUM ARSENIDE PHOSPHIDE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 2.4 MAXIMUM FORWARD VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 90.00 MILLIAMPERES SOURCE CUTOFF CURRENT ABSOLUTE CTRD POWER RATING PER CHARACTERISTIC 120.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTRX COLOR TONE PRODUCED PER SOURCE RED LENS CTSB LUMINOUS INTENSITY 3.0 MILLICANDELA MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.373 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.600 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.240 INCHES MAXIMUM |
| AEXK | LENS TRANSPARENCY | TRANSLUCENT |
| AXGY | MOUNTING METHOD | PRESS FIT |
| CBBL | FEATURES PROVIDED | MOUNTING HARDWARE |
| CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.4 MAXIMUM FORWARD VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 90.00 MILLIAMPERES SOURCE CUTOFF CURRENT ABSOLUTE |
| CTRD | POWER RATING PER CHARACTERISTIC | 120.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTRX | COLOR TONE PRODUCED PER SOURCE | RED LENS |
| CTSB | LUMINOUS INTENSITY | 3.0 MILLICANDELA MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |