91L02DM-B by Advanced Micro Devices Inc with NSN 5962010436195 - Submit a Quote

Part No. : 91L02DM-B Alternate P/N: 91L02DMB Manufacturer : Advanced Micro Devices Inc NSN : 5962-01-043-6195
Item Name : Microcircuit Memory CAGE Code : 34335 FSC : 5962 Microcircuits Electronic

ASAP Aviation Procurement is pleased to announce that part number 91L02DM-B of NSN 5962010436195 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number 91L02DM-B is a microcircuit memory manufactured by advanced micro devices inc under CAGE Code 34335. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote.In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea). 

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91L02DM-B Microcircuit Memory
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We will be using your response to these fields to calculate your quote. Within 15 minutes of receiving your RFQ, a member of our sales team will contact you with your quote. ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is a leading distributor of new and obsolete NSN parts for the aerospace, civil aviation, and defense industries. With our inventory of more than 2 billion parts sourced from over 5000 manufacturers from around the world, we do our level best to become your go-to one-stop shop. And to help us offer you the best streamlined parts procurement experience, we have advanced shipping facilities across USA.  91L02DM-B advanced micro devices inc is in stock.

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NSN Information for Part Number 91L02DM-B with NSN 5962-01-043-6195, 5962010436195

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-043-6195

Item Description:

MICROCIRCUIT,MEMORY

59620104361950NB
CIICHCCESDPMICCriticalityENAC
UBU0
Part NumberISCRNVCRNCCHCCMSDSSADC
91L02DM-B395

Characteristics Data of NSN 5962-01-043-6195, 5962010436195

MRCCriteriaCharacteristic
CZEQTime Rating Per Chacteristic200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMemory Device TypeRAM
AFJQStorage Temp Range-65.0/+150.0 DEG CELSIUS
CQZPInput Circuit Pattern13 INPUT
ADATBody Width0.278 INCHES MINIMUM AND 0.298 INCHES MAXIMUM
CQSJInclosure MaterialCERAMIC AND GLASS
TTQYTerminal Type And Quantity16 PRINTED CIRCUIT
CWSGTerminal Surface TreatmentSOLDER
CBBLFeatures ProvidedHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/DECODED OUTPUT
ADAQBody Length0.770 INCHES MINIMUM AND 0.808 INCHES MAXIMUM
AEHXMaximum Power Dissipation Rating260.0 MILLIWATTS
ADAUBody Height0.085 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
TESTTest Data Document96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
MRCDecoded RequirementClear Text Reply
CQSZInclosure ConfigurationDUAL-IN-LINE
AFGAOperating Temp Range-55.0/+125.0 DEG CELSIUS
CQWXOutput Logic FormN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
CZENVoltage Rating And Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
CZZZMemory CapacityUNKNOWN

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