91744543 by Thales Avionics with NSN 5961014263488 - Submit a Quote
| Part No. : 91744543 | Manufacturer : Thales Avionics | NSN : 5961-01-426-3488 |
| Item Name : Transistor | CAGE Code : F6481 | FSC : 5961 Semiconductor Devices and Associated Hardware |
ASAP Aviation Procurement is pleased to announce that part number 91744543 of NSN 5961014263488 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number 91744543 is a transistor manufactured by thales avionics under CAGE Code F6481. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote.In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
We will be using your response to these fields to calculate your quote. Within 15 minutes of receiving your RFQ, a member of our sales team will contact you with your quote. ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is a leading distributor of new and obsolete NSN parts for the aerospace, civil aviation, and defense industries. With our inventory of more than 2 billion parts sourced from over 5000 manufacturers from around the world, we do our level best to become your go-to one-stop shop. And to help us offer you the best streamlined parts procurement experience, we have advanced shipping facilities across USA. 91744543 thales avionics is in stock.
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NSN Information for Part Number 91744543 with NSN 5961-01-426-3488, 5961014263488
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-426-3488 Item Description: TRANSISTOR | 5961 | 014263488 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 91744543 | 5 | 2 | 5 |
Characteristics Data of NSN 5961-01-426-3488, 5961014263488MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC" ABHP OVERALL LENGTH 0.190 INCHES NOMINAL" ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM" ABKW OVERALL HEIGHT 0.670 INCHES MINIMUM" ABMK OVERALL WIDTH 0.145 INCHES NOMINAL" ALAS INTERNAL CONFIGURATION FIELD EFFECT" ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92" AXGY MOUNTING METHOD TERMINAL" CTMZ III SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE" CTQX CURRENT RATING PER CHARACTERISTIC 1.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT" CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 300.0 DEG CELSIUS AMBIENT AIR" TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD" ABBH INCLOSURE MATERIAL PLASTIC" ABHP OVERALL LENGTH 0.190 INCHES NOMINAL" ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM" ABKW OVERALL HEIGHT 0.670 INCHES MINIMUM" ABMK OVERALL WIDTH 0.145 INCHES NOMINAL" ALAS INTERNAL CONFIGURATION FIELD EFFECT" ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92" AXGY MOUNTING METHOD TERMINAL" CTMZ III SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE" CTQX CURRENT RATING PER CHARACTERISTIC 1.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT" CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 300.0 DEG CELSIUS AMBIENT AIR" TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD"
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC" |
| ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL" |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM" |
| ABKW | OVERALL HEIGHT | 0.670 INCHES MINIMUM" |
| ABMK | OVERALL WIDTH | 0.145 INCHES NOMINAL" |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT" |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 300.0 DEG CELSIUS AMBIENT AIR" |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
| ABBH | INCLOSURE MATERIAL | PLASTIC" |
| ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL" |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM" |
| ABKW | OVERALL HEIGHT | 0.670 INCHES MINIMUM" |
| ABMK | OVERALL WIDTH | 0.145 INCHES NOMINAL" |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT" |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 300.0 DEG CELSIUS AMBIENT AIR" |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
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